A monolithically integrated 190-GHz SiGe push-push oscillator

• Published in: IEEE microwave and wireless components letters Vol. 15; no. 12; pp. 862 - 864
• Main Authors: Wanner, R., Lachner, R., Olbrich, G.R.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-12-2005; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Circuit properties; Design. Technologies. Operation analysis. Testing; Dielectric, amorphous and glass solid devices; Electric, optical and optoelectronic circuits; Electronic circuits; Electronics; Exact sciences and technology; Frequency; Germanium silicon alloys; Heterojunction bipolar transistor (HBT); Integrated circuit technology; Integrated circuits; Metal-insulator structures; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits; millimeter wave integrated circuits; monolithic microwave integrated circuit (MMIC) oscillators; Oscillators; Oscillators, resonators, synthetizers; Power generation; Power measurement; Resistors; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; SiGe heterojunction bipolar transistor (HBT); Silicon germanium; Transmission lines; Phase noise; MIM devices; Power oscillator; Output power; Oscillation frequency; Push push connection; SiGe heterojunction bipolar transistor (HBT); Transmission line; Bipolar technology; Millimeter wave integrated circuits; Heterojunction bipolar transistors; Monolithic integrated circuit; Resistor; MMIC; Single sideband; Heterojunction bipolar transistor (HBT); Semiconductor alloys; MMIC oscillators; MIM structure; Metallic bond; Output signal; Contact line; monolithic microwave integrated circuit (MMIC) oscillators; Frequency offset; Capacitor; Minimum phase
• ISSN: 1531-1309; 1558-1764
• DOI: 10.1109/LMWC.2005.859996

In this letter, we present a fully monolithically integrated G-band push-push oscillator. The device is fabricated in a production-near SiGe:C bipolar technology. The transistors used in this work show a maximum transit frequency f/sub T/= 200GHz and a maximum frequency of oscillation fmax= 275GHz. The passive circuitry is realized by integrated transmission-line components, metal-insulator-metal (MIM)-capacitors and TaN resistors. The frequency of the output signal can be tuned between 183.3GHz and 190.5GHz, the maximum output power of the oscillator is -4.5dBm and the measured minimum single sideband phase noise is -73dBc/Hz at 1-MHz offset frequency. This represents the highest output frequency for oscillators using heterojunction bipolar transistor technology and published up to now.