Growth and characterization of single-crystalline gallium nitride using (100) LiAlO2 substrates

• Published in: Journal of crystal growth Vol. 274; no. 1-2; pp. 14 - 20
• Main Authors: REED, M. D, KRYLIOUK, O. M, MASTRO, M. A, ANDERSON, T. J
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier 15-01-2005
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Solid surfaces and solid-solid interfaces; Surface structure and topography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Vapor phase epitaxy; growth from vapor phase; Atomic force microscopy; Raman spectra; Inorganic compounds; B1. GaN; Gallium nitrides; Roughness; VPE; Hydrides; Crystal growth from vapors; XRD; B2. Semiconducting III-V materials; 81.15.K; A3. Hydride vapor-phase epitaxy; Surface reconstruction; Secondary ion mass spectra; 81.05.D A1. Characterization; Thick films; Binary compounds; Experimental study; Monocrystals; MOVPE method; 81.05.C; Nitridation; A1. Substrates; III-V semiconductors; X-ray photoelectron spectra
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2004.09.079