Impact Ionization of Excitons in an Electric Field in GaN

Impact Ionization of Excitons in an Electric Field in GaN

Quenching of the exciton luminescence of GaN epitaxial films and GaN/AlGaN quantum wells in an electric field is observed and attributed to impact ionization of excitonic states by hot electrons. It is found that impurity scattering rules the momentum relaxation of electrons rather than the acoustic...

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Bibliographic Details
Published in:physica status solidi (b) Vol. 216; no. 1; pp. 63 - 67
Main Authors: Nelson, D.K., Jacobson, M.A., Kagan, V.D., Shmidt, M., Gil, B., Grandjean, N., Massies, J.
Format: Journal Article
Language:English
Published: Berlin WILEY-VCH Verlag 01-11-1999
WILEY‐VCH Verlag
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Summary:Quenching of the exciton luminescence of GaN epitaxial films and GaN/AlGaN quantum wells in an electric field is observed and attributed to impact ionization of excitonic states by hot electrons. It is found that impurity scattering rules the momentum relaxation of electrons rather than the acoustic phonon scattering. The effective mean free path of hot electrons leff is estimated. The value of leff for quantum wells appears to be one order of magnitude larger than that for epitaxial films.
Bibliography:istex:43219B594AE3B705ACB44CA3DDF8EB1A22264BBB
ArticleID:PSSB63
ark:/67375/WNG-C11FZ651-4
ISSN:0370-1972
1521-3951
DOI:10.1002/(SICI)1521-3951(199911)216:1<63::AID-PSSB63>3.0.CO;2-8