Giant Stark effect in the emission of single semiconductor quantum dots

Giant Stark effect in the emission of single semiconductor quantum dots

We study the quantum-confined Stark effect in single InAs/GaAs quantum dots embedded within a AlGaAs/GaAs/AlGaAs quantum well. By significantly increasing the barrier height we can observe emission from a dot at electric fields of 500   kV cm − 1 , leading to Stark shifts of up to 25 meV. Our result...

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Bibliographic Details
Published in:Applied physics letters Vol. 97; no. 3; pp. 031104 - 031104-3
Main Authors: Bennett, Anthony J., Patel, Raj B., Skiba-Szymanska, Joanna, Nicoll, Christine A., Farrer, Ian, Ritchie, David A., Shields, Andrew J.
Format: Journal Article
Language:English
Published: American Institute of Physics 19-07-2010
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Summary:We study the quantum-confined Stark effect in single InAs/GaAs quantum dots embedded within a AlGaAs/GaAs/AlGaAs quantum well. By significantly increasing the barrier height we can observe emission from a dot at electric fields of 500   kV cm − 1 , leading to Stark shifts of up to 25 meV. Our results suggest this technique may enable future applications that require self-assembled dots with transitions at the same energy.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3460912