Electron temperature in electrically isolated Si double quantum dots
Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically isolated double quantum dots (DQDs) realised in phosphorus-doped silicon can be detected via capacitively coupled single-electron tunn...
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| Published in: | Applied physics letters Vol. 100; no. 13; pp. 133503 - 133503-3 |
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| Format: | Journal Article |
| Language: | English |
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American Institute of Physics
26-03-2012
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| Abstract | Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically isolated double quantum dots (DQDs) realised in phosphorus-doped silicon can be detected via capacitively coupled single-electron tunnelling devices. By means of time-resolved measurements of the detector's conductance, we investigate the dots' occupancy statistics in temperature. We observe a significant reduction of the effective electron temperature in the DQD as compared to the temperature in the detector's leads. This sets promises to make isolated DQDs suitable platforms for long-coherence quantum computation. |
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| AbstractList | Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically isolated double quantum dots (DQDs) realised in phosphorus-doped silicon can be detected via capacitively coupled single-electron tunnelling devices. By means of time-resolved measurements of the detector's conductance, we investigate the dots' occupancy statistics in temperature. We observe a significant reduction of the effective electron temperature in the DQD as compared to the temperature in the detector's leads. This sets promises to make isolated DQDs suitable platforms for long-coherence quantum computation. |
| Author | Rossi, A. Williams, D. A. Ferrus, T. |
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| Cites_doi | 10.1103/PhysRevLett.105.246804 10.1103/PhysRevB.50.14193 10.1103/PhysRevLett.91.226804 10.1063/1.3524490 10.1103/PhysRevB.81.121305 10.1063/1.3467963 10.1103/RevModPhys.79.1217 10.1088/0953-8984/18/21/S06 10.1103/PhysRevB.79.035303 10.1088/0957-4484/13/4/310 10.1103/PhysRevLett.95.090502 10.1103/PhysRevB.44.1646 |
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| Copyright | 2012 American Institute of Physics |
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