Electron temperature in electrically isolated Si double quantum dots

Electron temperature in electrically isolated Si double quantum dots

Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically isolated double quantum dots (DQDs) realised in phosphorus-doped silicon can be detected via capacitively coupled single-electron tunn...

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Bibliographic Details
Published in:Applied physics letters Vol. 100; no. 13; pp. 133503 - 133503-3
Main Authors: Rossi, A., Ferrus, T., Williams, D. A.
Format: Journal Article
Language:English
Published: American Institute of Physics 26-03-2012
Online Access:Get full text
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Summary:Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically isolated double quantum dots (DQDs) realised in phosphorus-doped silicon can be detected via capacitively coupled single-electron tunnelling devices. By means of time-resolved measurements of the detector's conductance, we investigate the dots' occupancy statistics in temperature. We observe a significant reduction of the effective electron temperature in the DQD as compared to the temperature in the detector's leads. This sets promises to make isolated DQDs suitable platforms for long-coherence quantum computation.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3697832