Switching current reduction using perpendicular anisotropy in CoFeB-MgO magnetic tunnel junctions

• Published in: Applied physics letters Vol. 98; no. 11; pp. 112507 - 112507-3
• Main Authors: Khalili Amiri, P., Zeng, Z. M., Langer, J., Zhao, H., Rowlands, G., Chen, Y.-J., Krivorotov, I. N., Wang, J.-P., Jiang, H. W., Katine, J. A., Huai, Y., Galatsis, K., Wang, K. L.
• Format: Journal Article
• Language: English
• Published: American Institute of Physics 14-03-2011
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.3567780

We present in-plane CoFeB-MgO magnetic tunnel junctions with perpendicular magnetic anisotropy in the free layer to reduce the spin transfer induced switching current. The tunneling magnetoresistance ratio, resistance-area product, and switching current densities are compared in magnetic tunnel junctions with different CoFeB compositions. The effects of CoFeB free layer thickness on its magnetic anisotropy and current-induced switching characteristics are studied by vibrating sample magnetometry and electrical transport measurements on patterned elliptical nanopillar devices. Switching current densities
∼
4

MA
/
cm
2
are obtained at 10 ns write times.