Wurtzite GaN nanocolumns grown on Si(001) by molecular beam epitaxy

Wurtzite single crystal GaN nanocolumns were grown by plasma-assisted molecular beam epitaxy on bare Si(001) substrates. Nanocolumns with diameters in the range of 20 - 40 nm have no traces of extended defects and they grow aligned along the [0001] direction. Photoluminescence measurements in nanoco...

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Bibliographic Details

Published in:	Applied physics letters Vol. 88; no. 21; pp. 213114 - 213114-3
Main Authors:	Cerutti, L., Ristić, J., Fernández-Garrido, S., Calleja, E., Trampert, A., Ploog, K. H., Lazic, S., Calleja, J. M.
Format:	Journal Article
Language:	English
Published:	American Institute of Physics 22-05-2006
Online Access:	Get full text
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