Wurtzite GaN nanocolumns grown on Si(001) by molecular beam epitaxy

• Published in: Applied physics letters Vol. 88; no. 21; pp. 213114 - 213114-3
• Main Authors: Cerutti, L., Ristić, J., Fernández-Garrido, S., Calleja, E., Trampert, A., Ploog, K. H., Lazic, S., Calleja, J. M.
• Format: Journal Article
• Language: English
• Published: American Institute of Physics 22-05-2006
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.2204836

Wurtzite single crystal GaN nanocolumns were grown by plasma-assisted molecular beam epitaxy on bare Si(001) substrates. Nanocolumns with diameters in the range of
20
-
40
nm
have no traces of extended defects and they grow aligned along the [0001] direction. Photoluminescence measurements in nanocolumns evidence a very high crystal quality in terms of intense and narrow excitonic emissions. Raman scattering data show that the nanocolumns are strain-free. These results open the way to an efficient integration of optoelectronic devices with the complementary metal oxide semiconductor technology.