Low-frequency noise in permeable base transistors

• Published in: IEEE transactions on electron devices Vol. 31; no. 10; pp. 1408 - 1413
• Main Authors: Zhu, X.C., Zhang, X.N., Van Der Ziel, A., Bozler, C.O.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-10-1984; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Transistor; 1/f noise; Permeable base transistor
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/T-ED.1984.21725

The predominant noise is 1/f noise and consists of two parts: a) Noise varying as I\min{C}\max{2} , generated mostly with conducting channel and predominating for normal values of the collector voltage V CE . b) Noise at low V CE and practically independent of V CE ; it is generated chiefly in the space charge region around the base grating and gives collector 1/f noise at V_{CE} = 0 . The turnover frequency of the first noise source lies at about 20 MHz for V_{CE} = 0.30 V, V_{BE} = 0.20 V. At sufficiently high frequencies the PBT shows thermal noise of the output conductance g_{c0} at zero bias. Generation-recombination noise is observed at large V BE and low V CE and comes mostly from the space charge region around the base grating.