Applied electric and magnetic fields effects on the nonlinear optical rectification and the carrier's transition lifetime in InAs/GaAs core/shell quantum dot

• Published in: Materials chemistry and physics Vol. 267; p. 124660
• Main Authors: Makhlouf, D., Choubani, M., Saidi, F., Maaref, H.
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 15-07-2021; Elsevier BV
• Subjects: Applied electric field; Applied magnetic field; Blue shift; Coefficients; Comparative studies; Conduction bands; Core-shell structure; Core/shell quantum dot; Doppler effect; Electric fields; Finite difference method; Hydrostatic pressure; Indium arsenides; Magnetic fields; Nonlinear optical rectification; Nonlinear optics; Optoelectronic devices; Quantum dots; Red shift; Thickness; Transition lifetime; Transition lifetime; Core/shell quantum dot; Applied electric field; Applied magnetic field; Nonlinear optical rectification
• ISSN: 0254-0584; 1879-3312
• DOI: 10.1016/j.matchemphys.2021.124660

In this paper, we have focused our research on the design of a resonant lens-shaped InAs/GaAs core/shell quantum dot structure with intra-band transitions in the conduction band. We have studied the combined effects of the structural dimensions, the hydrostatic pressure (P), the temperature (T), the applied electric (F) and magnetic (B) fields on the nonlinear optical rectification (NOR) and the carrier's transition lifetime (τ). This study is done under the compact density matrix formalism and the effective mass approximation by using the Finite Difference Method (FDM). Obtained Results show that the NOR coefficient is improved by increasing the core radius, as the NOR magnitude increases and a red shift is achieved. Moreover, the application of an electric and a magnetic field enhances the NOR coefficient where its resonant energy exhibits a red shift (blue shift) with increasing the applied magnetic field (applied electric field). Besides, a comparative study between the core/shell structure and a single quantum dot, for B = 15 T, shows that the cap layer thickness can be controlled and reduced to obtain the optimized NOR coefficient. Consequently, our theoretical results will be useful for designing new optoelectronic core/shell devices with an improved performance by the adjustment of the applied external proofs.
•InAs/GaAs core/shell QD.•Electric and magnetic fields effects on the NOR.•External proofs effects on the carrier's transition lifetime.•Enhancement on the NOR under external effects.