Nonequilibrium electron transport in bipolar devices
The dynamics of nonequilibrium electron transport in bipolar devices have been investigated by calculating minority-carrier elastic and inelastic scattering rates as a function of energy for different majority-carrier concentrations in typical p-type III-V semiconductors. Scattering rates depend on...
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| Published in: | Applied physics letters Vol. 51; no. 1; pp. 42 - 44 |
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| Main Authors: | , |
| Format: | Journal Article |
| Language: | English |
| Published: |
Melville, NY
American Institute of Physics
06-07-1987
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| Online Access: | Get full text |
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| Abstract | The dynamics of nonequilibrium electron transport in bipolar devices have been investigated by calculating minority-carrier elastic and inelastic scattering rates as a function of energy for different majority-carrier concentrations in typical p-type III-V semiconductors. Scattering rates depend on the majority-carrier concentration and a constraint involving the ratio of electron and heavy-hole effective mass. |
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| AbstractList | The dynamics of nonequilibrium electron transport in bipolar devices have been investigated by calculating minority-carrier elastic and inelastic scattering rates as a function of energy for different majority-carrier concentrations in typical p-type III-V semiconductors. Scattering rates depend on the majority-carrier concentration and a constraint involving the ratio of electron and heavy-hole effective mass. |
| Author | YAFET, Y LEVI, A. F. J |
| Author_xml | – sequence: 1 givenname: A. F. J surname: LEVI fullname: LEVI, A. F. J organization: ATT Bell lab., Murray Hill NJ 07974, United States – sequence: 2 givenname: Y surname: YAFET fullname: YAFET, Y organization: ATT Bell lab., Murray Hill NJ 07974, United States |
| BackLink | http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=7524103$$DView record in Pascal Francis |
| BookMark | eNo9kE1LxDAYhIOs4O4q_oUeRE9d8-bNR3OUxS9Y9KD3kKYpRLJtN2kF_71VF0_DwDMDMyuy6PrOE3IJdANU4i1sdFVVcEKWQJUqEaBakCWlFEupBZyRVc4fsxUMcUn4y5w-TCGGOoVpX_jo3Zj6rhiT7fLQp7EIXVGHoY82FY3_DM7nc3La2pj9xVHX5O3h_n37VO5eH5-3d7vSIddjibVsG6ta5MrxymnquGwpMM8Z10rTpkGpPVcMOTBhGwZc68pyKWoqHa7J9V_rkPrD5PNo9iE7H6PtfD9lw7gQCChm8OYPdKnPOfnWDCnsbfoyQM3PJwbM7yczeXWstNnZ2M4bXcj_uBKMA0X8BsrbYHI |
| CODEN | APPLAB |
| CitedBy_id | crossref_primary_10_1063_1_109746 crossref_primary_10_1109_55_17832 crossref_primary_10_1063_1_346789 crossref_primary_10_7567_JJAP_55_084301 crossref_primary_10_1103_PhysRevLett_74_4273 crossref_primary_10_1143_JJAP_30_L135 crossref_primary_10_1063_1_99877 crossref_primary_10_1557_PROC_102_361 crossref_primary_10_1016_0038_1101_89_90275_X crossref_primary_10_1557_PROC_107_259 crossref_primary_10_1103_PhysRevB_51_17490 crossref_primary_10_1088_0031_8949_1988_T23_043 crossref_primary_10_1109_55_31742 crossref_primary_10_1063_1_105698 crossref_primary_10_1063_1_100282 crossref_primary_10_1063_1_102545 crossref_primary_10_1063_1_101972 crossref_primary_10_1063_1_1372657 crossref_primary_10_1109_5_4439 crossref_primary_10_1063_1_105376 crossref_primary_10_1063_1_347164 crossref_primary_10_1063_1_99545 crossref_primary_10_1063_1_352222 crossref_primary_10_1088_0953_8984_2_43_018 crossref_primary_10_1063_1_102174 crossref_primary_10_1103_PhysRevB_49_17007 crossref_primary_10_1016_S0169_4332_00_00649_8 crossref_primary_10_1088_0268_1242_7_3B_034 crossref_primary_10_1103_PhysRevB_47_6316 crossref_primary_10_1103_PhysRevB_47_16257 crossref_primary_10_1016_0749_6036_90_90120_V crossref_primary_10_1063_1_102133 crossref_primary_10_1088_0268_1242_9_5S_077 crossref_primary_10_1103_PhysRevB_85_165206 crossref_primary_10_1016_0038_1098_91_90680_T crossref_primary_10_1016_0038_1101_90_90182_E crossref_primary_10_1364_JOSAB_11_002519 crossref_primary_10_1063_1_341625 crossref_primary_10_1016_0038_1101_88_90356_5 crossref_primary_10_1109_3_214497 crossref_primary_10_1063_1_361231 crossref_primary_10_1103_PhysRevLett_107_256602 crossref_primary_10_1016_0038_1098_88_90139_1 crossref_primary_10_1063_1_104063 crossref_primary_10_1103_PhysRevB_65_121301 crossref_primary_10_1063_1_100861 crossref_primary_10_1016_0038_1101_89_90229_3 crossref_primary_10_1109_55_20396 crossref_primary_10_1109_16_3337 crossref_primary_10_1063_1_100814 crossref_primary_10_1103_PhysRevLett_61_1647 crossref_primary_10_1063_1_100855 crossref_primary_10_1016_S1386_9477_98_00049_6 crossref_primary_10_1109_55_31672 crossref_primary_10_7567_JJAP_53_04EF09 |
| Cites_doi | 10.1063/1.96832 10.1063/1.97309 10.1063/1.97641 10.1016/0038-1098(86)90170-5 10.1063/1.97831 |
| ContentType | Journal Article |
| Copyright | 1988 INIST-CNRS |
| Copyright_xml | – notice: 1988 INIST-CNRS |
| DBID | IQODW AAYXX CITATION 7SP 7U5 8FD L7M |
| DOI | 10.1063/1.98881 |
| DatabaseName | Pascal-Francis CrossRef Electronics & Communications Abstracts Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace |
| DatabaseTitle | CrossRef Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace Electronics & Communications Abstracts |
| DatabaseTitleList | Solid State and Superconductivity Abstracts CrossRef |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering Physics |
| EISSN | 1077-3118 |
| EndPage | 44 |
| ExternalDocumentID | 10_1063_1_98881 7524103 |
| GroupedDBID | -DZ -~X .DC 0ZJ 186 1UP 2-P 23M 2WC 3O- 4.4 41~ 53G 5GY 5VS 6J9 6TJ 6XO A9. AABDS AAEUA AAGZG AAPUP AAYJJ ABFLS ABFTF ABPTK ABRJW ABTAH ABZEH ACBRY ACGFO ACGFS ACKIV ACNCT ACZLF ADCTM AEGXH AENEX AETEA AFHCQ AGIHO AGKCL AGLKD AI. AIAGR ALEPV ALMA_UNASSIGNED_HOLDINGS AQWKA ATXIE AWQPM BPZLN CS3 D0L EBS EJD ESX F.2 F20 F5P FDOHQ FFFMQ HAM IQODW M6X M71 M73 MVM N9A NEJ NEUPN NPSNA O-B OHT P2P RDFOP RIP RNS ROL RQS SJN T9H TAE TN5 UCJ UE8 UPT UQL VH1 VOH VQP WH7 XFK XJE XJT XOL YYP YZZ ZY4 ~02 AAYIH AAYXX ABJNI ACBEA AEJMO AGMXG CITATION 7SP 7U5 8FD L7M |
| ID | FETCH-LOGICAL-c349t-3b6fda7f347c48c90c46f012e4249790dd369e47234125ad214998a465b06c3 |
| ISSN | 0003-6951 |
| IngestDate | Fri Oct 25 01:19:10 EDT 2024 Thu Nov 21 21:14:53 EST 2024 Fri Nov 25 13:53:07 EST 2022 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 1 |
| Keywords | Minority carrier Semiconductor materials Non equilibrium system Elastic scattering Theoretical study Transistor Majority carrier III-V compound Inorganic compound Gallium Arsenides Acceptor center Inelastic scattering Charge carrier scattering Charge carrier concentration Indium Arsenides Application |
| Language | English |
| License | CC BY 4.0 |
| LinkModel | OpenURL |
| MergedId | FETCHMERGED-LOGICAL-c349t-3b6fda7f347c48c90c46f012e4249790dd369e47234125ad214998a465b06c3 |
| Notes | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
| PQID | 24553135 |
| PQPubID | 23500 |
| PageCount | 3 |
| ParticipantIDs | proquest_miscellaneous_24553135 crossref_primary_10_1063_1_98881 pascalfrancis_primary_7524103 |
| PublicationCentury | 1900 |
| PublicationDate | 1987-07-06 |
| PublicationDateYYYYMMDD | 1987-07-06 |
| PublicationDate_xml | – month: 07 year: 1987 text: 1987-07-06 day: 06 |
| PublicationDecade | 1980 |
| PublicationPlace | Melville, NY |
| PublicationPlace_xml | – name: Melville, NY |
| PublicationTitle | Applied physics letters |
| PublicationYear | 1987 |
| Publisher | American Institute of Physics |
| Publisher_xml | – name: American Institute of Physics |
| References | (2024020221270916800_r5) 1987; 50 (2024020221270916800_r6) 1986; 57 (2024020221270916800_r7) 1986; 48 2024020221270916800_r8 (2024020221270916800_r3) 1986; EDL-7 (2024020221270916800_r4) 1986; 49 2024020221270916800_r2 2024020221270916800_r1 (2024020221270916800_r7a) 1986; 49 |
| References_xml | – ident: 2024020221270916800_r8 – volume: EDL-7 start-page: 573 year: 1986 ident: 2024020221270916800_r3 publication-title: IEEE Electron Device Lett. – volume: 48 start-page: 1609 year: 1986 ident: 2024020221270916800_r7 publication-title: Appl. Phys. Lett. doi: 10.1063/1.96832 – ident: 2024020221270916800_r1 – ident: 2024020221270916800_r2 – volume: 49 start-page: 1481 year: 1986 ident: 2024020221270916800_r4 publication-title: Appl. Phys. Lett. doi: 10.1063/1.97309 – volume: 49 start-page: 1312 year: 1986 ident: 2024020221270916800_r7a publication-title: Appl. Phys. Lett. doi: 10.1063/1.97641 – volume: 57 start-page: 873 year: 1986 ident: 2024020221270916800_r6 publication-title: Solid State Commun. doi: 10.1016/0038-1098(86)90170-5 – volume: 50 start-page: 98 year: 1987 ident: 2024020221270916800_r5 publication-title: Appl. Phys. Lett. doi: 10.1063/1.97831 |
| SSID | ssj0005233 |
| Score | 1.5291098 |
| Snippet | The dynamics of nonequilibrium electron transport in bipolar devices have been investigated by calculating minority-carrier elastic and inelastic scattering... |
| SourceID | proquest crossref pascalfrancis |
| SourceType | Aggregation Database Index Database |
| StartPage | 42 |
| SubjectTerms | Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology General theory, scattering mechanisms Physics |
| Title | Nonequilibrium electron transport in bipolar devices |
| URI | https://search.proquest.com/docview/24553135 |
| Volume | 51 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwtV1NT-MwEB0tRUgghPhaUZayOXBDgST-SHxc7bZCqCpILRKcosR2pEoQupT8f8ax06biABy4RI2VWNE89_mN7ZkBOMuUDIjOmR9SpEDK8a8oQq38XHOpOc4XsTaBwlfjeHSf_Oub3fOmzuey7VuRxjbE2kTOfgHtRafYgL8Rc7wi6nj9FO6j51L_r6b1Uf7q6bwpc2NqQdgs5maFI5_OjEtrQqYMUbQVaiNL7ZLH_PyxjvdZKO8hvmH5ZLDcUXrICt0ic2Wj6pJ6dTLgK8RIfC5c7ldHjO6uPQAsy9l8WG6-tOkb3zExSh-zKHAh0MUOl5NNs8E-ukkHd8NhOunfT9ZgPUKaMJUPxtej1gEdQpp6h-bTbMiz6fjSdbuiJbZn2RyHdWHrkbybWmu9MNmFHSf0vT8WoT34oct92Gqlf9yHjVtr4wOgq6h5DWreAjVvWnoONc-hdgjjQX_y98p39Sx8Sah49UnOC5XFBaGxpIkUgaS8QIGgKfrAsQiUIlxoGkeoLCKWqQi9V5FklLM84JL8hE6JH3MEXs5YHlIpowy950SrREoRF7lE71epgLAueI1d0plNWpLWhw04ScO0Nl0Xeiv2WjwXM9R0AenC78Z-KRKO2UXKSv1czdOIMuRtwo4_fOIXbC7H2gl0Xl8q3YO1uapOa6TfAK8kSdM |
| link.rule.ids | 315,782,786,27934,27935 |
| linkProvider | Multiple Vendors |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Nonequilibrium+electron+transport+in+bipolar+devices&rft.jtitle=Applied+physics+letters&rft.au=Levi%2C+A+F+J&rft.au=Yafet%2C+Y&rft.date=1987-07-06&rft.issn=0003-6951&rft.volume=51&rft.issue=1&rft.spage=42&rft.epage=44&rft_id=info:doi/10.1063%2F1.98881&rft.externalDBID=NO_FULL_TEXT |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0003-6951&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0003-6951&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0003-6951&client=summon |