Nonequilibrium electron transport in bipolar devices

The dynamics of nonequilibrium electron transport in bipolar devices have been investigated by calculating minority-carrier elastic and inelastic scattering rates as a function of energy for different majority-carrier concentrations in typical p-type III-V semiconductors. Scattering rates depend on...

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Bibliographic Details
Published in:	Applied physics letters Vol. 51; no. 1; pp. 42 - 44
Main Authors:	LEVI, A. F. J, YAFET, Y
Format:	Journal Article
Language:	English
Published:	Melville, NY American Institute of Physics 06-07-1987
Subjects:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology General theory, scattering mechanisms Physics Minority carrier Semiconductor materials Non equilibrium system Elastic scattering Theoretical study Transistor Majority carrier III-V compound Inorganic compound Gallium Arsenides Acceptor center Inelastic scattering Charge carrier scattering Charge carrier concentration Indium Arsenides Application
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Summary:	The dynamics of nonequilibrium electron transport in bipolar devices have been investigated by calculating minority-carrier elastic and inelastic scattering rates as a function of energy for different majority-carrier concentrations in typical p-type III-V semiconductors. Scattering rates depend on the majority-carrier concentration and a constraint involving the ratio of electron and heavy-hole effective mass.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.98881