Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching

• Published in: Applied physics letters Vol. 87; no. 5; pp. 051107 - 051107-3
• Main Authors: Sharma, R., Haberer, E. D., Meier, C., Hu, E. L., Nakamura, S.
• Format: Journal Article
• Language: English
• Published: American Institute of Physics 01-08-2005
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.2008380

A three-period vertically oriented GaN-based air-gap distributed Bragg reflector structure was fabricated using band-gap-selective photoelectrochemical (PEC) etching. The epitaxial structure consisted of an
Al
0.08
Ga
0.92
N
∕
(
In
0.04
Ga
0.96
N
∕
In
0.07
Ga
0.93
N
)
superlattice structure, wherein the InGaN layers served as sacrificial layers during PEC etching. Microreflectance measurements yielded an average enhancement in the reflected signal of
∼
12
-fold over the wavelength range of 550-650 nm, when compared with the signal from a dry-etched GaN surface.