Highly piezoelectric MgZr co-doped aluminum nitride-based vibrational energy harvesters [Correspondence]

• Published in: IEEE transactions on ultrasonics, ferroelectrics, and frequency control Vol. 62; no. 11; pp. 2005 - 2008
• Main Authors: Minh, Le Van, Hara, Motoaki, Yokoyama, Tsuyoshi, Nishihara, Tokihiro, Ueda, Masanori, Kuwano, Hiroki
• Format: Journal Article
• Language: English
• Published: United States IEEE 01-11-2015; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Aluminum nitride; III-V semiconductor materials; Power generation; Resonant frequency; Silicon
• ISSN: 0885-3010; 1525-8955
• DOI: 10.1109/TUFFC.2014.006750

The first MgZr co-doped AlN-based vibrational energy harvester (VEH) is presented. (MgZr)AlN, which is a new class of doped AlN, provides high piezoelectricity and cost advantage. Using 13%-(MgZr)-doped AlN for micromachined VEHs, maximum output power of 1.3 μW was achieved with a Q-factor of 400 when resonant frequency, vibration acceleration, load resistance were 792 Hz, 8 m/s 2 , and 1.1 MΩ, respectively. Normalized power density was 8.1 kW.g -2 .m -3 . This was one of the highest values among the currently available piezoelectric VEHs.