Optical reflectivity and amorphization of GaAs during decompression from megabar pressures

• Published in: Applied physics letters Vol. 57; no. 25; pp. 2666 - 2668
• Main Authors: VOHRA, Y. K, HUI XIA, RUOFF, A. L
• Format: Journal Article
• Language: English
• Published: Melville, NY American Institute of Physics 17-12-1990
• Subjects: 360602 - Other Materials- Structure & Phase Studies; 360603 - Materials- Properties; AMORPHOUS STATE; ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; Condensed matter: electronic structure, electrical, magnetic, and optical properties; CONTAINERS; CRYSTALLIZATION; DIFFRACTION; Exact sciences and technology; GALLIUM ARSENIDES; GALLIUM COMPOUNDS; Infrared and raman spectra and scattering; MATERIALS SCIENCE; OPTICAL PROPERTIES; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; Physics; PNICTIDES; PRESSURE VESSELS; REFLECTIVITY; SCATTERING; SPECTROSCOPY; SURFACE PROPERTIES; VERY HIGH PRESSURE; X-RAY DIFFRACTION; Gallium Arsenides; Compression; Semiconductor materials; Energy dispersion; Amorphization; Hydrostatic pressure; Experimental study; Optical reflection; X ray diffraction; Inorganic compound
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.103795

Polycrystalline GaAs was studied in a diamond anvil cell by optical reflection spectroscopy and energy-dispersive x-ray diffraction to pressures of 115 GPa (1.15 Mbar). Complete amorphization was observed at ambient conditions after decompression from 115 GPa, and, subsequent compression caused crystallization around 27 GPa to an orthorhombic phase. The results are compared with other group IV and III-V semiconductor materials and implantation-amorphized GaAs.