Charge transport by surface acoustic waves in GaAs
The traveling wave potential wells, associated with a surface acoustic wave (SAW) generated in a multilayer epitaxial GaAs structure, are used to transport electrons at the velocity of sound in the buried channel formed by a Schottky-N-P layer configuration. A monolithic delay line based on the SAW...
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| Published in: | Applied physics letters Vol. 41; no. 4; pp. 332 - 334 |
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| Main Authors: | , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
15-08-1982
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| Online Access: | Get full text |
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| Summary: | The traveling wave potential wells, associated with a surface acoustic wave (SAW) generated in a multilayer epitaxial GaAs structure, are used to transport electrons at the velocity of sound in the buried channel formed by a Schottky-N-P layer configuration. A monolithic delay line based on the SAW transport concept is constructed and the time domain response of the delay line is presented. The SAW charge transport concept in GaAs is expected to be useful for the implementation of high-speed monolithic signal processors. |
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| Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.93526 |