Modeling of a Parameter to Evaluate Multilevel Operation of Bipolar Oxide Resistive Device

Modeling of a Parameter to Evaluate Multilevel Operation of Bipolar Oxide Resistive Device

We propose a simple and efficient model using a phenomenological fitting parameter for current-voltage sweeps to describe vacancy dynamics in oxide resistive devices, and thereby to explain the relation between physical state and resistance in these devices. The fitting parameter serves as a figure...

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Bibliographic Details
Published in:IEEE transactions on electron devices Vol. 61; no. 7; pp. 2577 - 2580
Main Authors: Choi, Sang-Jun, Kim, Ki-Hong, Yang, Woo-Young, Cho, Soohaeng
Format: Journal Article
Language:English
Published: New York IEEE 01-07-2014
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:
Copper oxide
Devices
Dynamics
Educational institutions
Electrodes
Fittings
Ions
Mathematical models
multibit operation
Multilevel
Oxides
Performance evaluation
Resistance
Switches
Threshold voltage
Vacancies
vacancy
Copper oxide
vacancy
multibit operation
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Summary:We propose a simple and efficient model using a phenomenological fitting parameter for current-voltage sweeps to describe vacancy dynamics in oxide resistive devices, and thereby to explain the relation between physical state and resistance in these devices. The fitting parameter serves as a figure of merit, describing a device's capability for multibit operation. The understanding achieved through this model allows efficient evaluation of device performance factors including the maximum ON/OFF ratio and the multiresistance property.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2014.2318833