InAs nanowire growth modes on Si (111) by gas source molecular beam epitaxy

InAs nanowires (NWs) were grown on silicon substrates by gas source molecular beam epitaxy using five different growth modes: (1) Au-assisted growth, (2) positioned (patterned) Au-assisted growth, (3) Au-free growth, (4) positioned Au-assisted growth using a patterned oxide mask, and (5) Au-free sel...

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Bibliographic Details

Published in:	Journal of crystal growth Vol. 436; pp. 1 - 11
Main Authors:	Robson, M.T., LaPierre, R.R.
Format:	Journal Article
Language:	English
Published:	Elsevier B.V 15-02-2016
Subjects:	A1. Nanostructures A3. Molecular beam epitaxy B2. Semiconducting III–V materials Crystal growth Flux Indium arsenides Masks Molecular beam epitaxy Nanowires Oxides Silicon substrates A3. Molecular beam epitaxy B2. Semiconducting III–V materials A1. Nanostructures
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