InAs nanowire growth modes on Si (111) by gas source molecular beam epitaxy

• Published in: Journal of crystal growth Vol. 436; pp. 1 - 11
• Main Authors: Robson, M.T., LaPierre, R.R.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15-02-2016
• Subjects: A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting III–V materials; Crystal growth; Flux; Indium arsenides; Masks; Molecular beam epitaxy; Nanowires; Oxides; Silicon substrates; A3. Molecular beam epitaxy; B2. Semiconducting III–V materials; A1. Nanostructures
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2015.11.035

InAs nanowires (NWs) were grown on silicon substrates by gas source molecular beam epitaxy using five different growth modes: (1) Au-assisted growth, (2) positioned (patterned) Au-assisted growth, (3) Au-free growth, (4) positioned Au-assisted growth using a patterned oxide mask, and (5) Au-free selective-area epitaxy (SAE) using a patterned oxide mask. Optimal growth conditions (temperature, V/III flux ratio) were identified for each growth mode for control of NW morphology and vertical NW yield. The highest yield (72%) was achieved with the SAE method at a growth temperature of 440°C and a V/III flux ratio of 4. Growth mechanisms are discussed for each of the growth modes.
•InAs nanowires were grown on Si by gas source molecular beam epitaxy (GS-MBE).•Various growth modes of InAs nanowires by GS-MBE were investigated.•Results from GS-MBE were compared with solid-source MBE.•Selective area epitaxy of InAs nanowires was extensively investigated.•Effect of growth temperature, V/III flux ratio, and pattern pitch was studied.