Ameliorating the bias stress stability of n-type OFETs

• Published in: Organic electronics Vol. 15; no. 11; pp. 3203 - 3210
• Main Authors: AHMED, Rizwan, SIMBRUNNER, Clemens, SCHWABEGGER, G, BAIG, M. A, SITTER, H
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier 01-11-2014
• Subjects: Applied sciences; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Electronics; Exact sciences and technology; Fullerenes and related materials; diamonds, graphite; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Materials science; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Specific materials; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Transistors; Voltage threshold; Grain boundaries; Grain size analysis; Threshold voltage shift; Electric stress; Electronic circuit; Modeling; Substrat temperature; Grain boundary; Low voltage; n type semiconductor; Stress effects; Trapping/De-trapping of charges; Bias stress; Organic electronics; Charge trapping in semiconductor or dielectric layer; Grain size; Active layer; Multiple layer; Field effect transistor; Charge carrier trapping; Industrialization; Morphology; Fullerenes; Low voltage OFETs; Microstructure
• ISSN: 1566-1199; 1878-5530
• DOI: 10.1016/j.orgel.2014.08.061