Cooled P-InAsSbP/n-InAs/N-InAsSbP double heterostructure photodiodes

• Published in: Infrared physics & technology Vol. 64; pp. 62 - 65
• Main Authors: Brunkov, P.N., Il'inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus', N.M., Usikova, A.A.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-05-2014
• Subjects: Dark current; Heterostructures; Illumination; Indium arsenides; Infrared; IR sensors; Photodiode structures; Photodiodes; Saturation; Simulation; Dark current; Photodiode structures; IR sensors
• ISSN: 1350-4495; 1879-0275
• DOI: 10.1016/j.infrared.2014.01.010

•We tested for the first time InAs double heterostructure photodiodes at low temperatures.•InAs DH photodiodes exhibited superior performance compared to any InAs bulk diode.•InAs DH heterostructures promise new trends in photodiode fabrication.
Double heterostructure (DH) photodiodes (PDs) with InAs active layer and back-side illumination have been studied in the 100–300K temperature range. Temperature dependence of a spectral response was standard for InAs based PDs while saturation current (or zero bias resistance) was characterized by a single value of the activation energy with domination of a diffusion current at most temperatures. As a result the simulated detectivity value was beyond the known numbers for homo- and heterojunction InAs PDs.