Interface states and MWS polarization contributions to the dielectric response of low voltage ZnO varistor

• Published in: Ceramics international Vol. 37; no. 1; pp. 207 - 214
• Main Authors: Tsonos, C., Kanapitsas, A., Triantis, D., Anastasiadis, C., Stavrakas, I., Pissis, P., Neagu, E.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 2011
• Subjects: B. Grain boundaries; B. Interfaces; C. Dielectric properties; Ceramics; D. ZnO; Density; Dielectric relaxation; Electronic devices; Grain boundaries; Low voltage; Polarization; Varistors; Zinc oxide; D. ZnO; B. Grain boundaries; B. Interfaces; C. Dielectric properties
• ISSN: 0272-8842; 1873-3956
• DOI: 10.1016/j.ceramint.2010.08.036

The main purpose of this work is to study the dielectric response of commercial low voltage ZnO varistors by means of dielectric relaxation spectroscopy (DRS) and thermally stimulated depolarization currents (TSDC) in a wide temperature range. Four relaxation processes have been studied here and all of them demonstrate Cole–Davidson behaviour. The first two faster relaxation mechanisms are known processes in ZnO varistors and those are related to the ZnO bulk traps. The next one faster relaxation mechanism attributed to the MWS polarization which should be related to the intergranular Bi-rich microregions. The remaining slower relaxation mechanism is associated to the grain boundaries interfaces. Based on the block model for the ZnO varistor a gradual reduction in the total depletion width is observed at a temperature about 330
K, which can be considered that is due to the gradual decrease of the interface states density at this temperature region.