A compact T-shaped nanodevice for charge sensing of a tunable double quantum dot in scalable silicon technology

• Published in: Physics letters. A Vol. 380; no. 11-12; pp. 1205 - 1209
• Main Authors: Tagliaferri, M.L.V., Crippa, A., De Michielis, M., Mazzeo, G., Fanciulli, M., Prati, E.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 11-03-2016
• Subjects: Charge; Charge sensing; CMOS; CMOS-compatible; Electron beam lithography; MOSSET; Nano-transistor; Nanostructure; Quantum dots; Qubits (quantum computing); Semiconductors; Silicon; Single-electron transistors; Silicon; Nano-transistor; MOSSET; Quantum dots; Charge sensing; CMOS-compatible
• ISSN: 0375-9601; 1873-2429
• DOI: 10.1016/j.physleta.2016.01.031

We report on the fabrication and the characterization of a tunable complementary-metal oxide semiconductor (CMOS) system consisting of two quantum dots and a MOS single electron transistor (MOSSET) charge sensor. By exploiting a compact T-shaped design and few gates fabricated by electron beam lithography, the MOSSET senses the charge state of either a single or double quantum dot at 4.2 K. The CMOS compatible fabrication process, the simplified control over the number of quantum dots and the scalable geometry make such architecture exploitable for large scale fabrication of multiple spin-based qubits in circuital quantum information processing.
•Charge sensing of tunable, by position and number, quantum dots is demonstrated.•A compact T-shaped design with five gates at a single metalization level is proposed.•The electrometer is a silicon-etched nanowire acting as a disorder tolerant MOSSET.