The Effect of Thermal Processing on Multilayer Porous Silicon Microcavity
The effect of thermal processing, that gave limited oxidation from annealing under N2 atmosphere, on multilayer porous silicon (P‐Si) microcavities has been investigated. The reflectivity spectra were measured before and after thermal processing. The observation of multilayer samples by scanning ele...
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Published in: | Physica status solidi. A, Applied research Vol. 182; no. 1; pp. 319 - 324 |
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Main Authors: | , , |
Format: | Journal Article |
Language: | English |
Published: |
Berlin
WILEY-VCH Verlag Berlin GmbH
01-11-2000
WILEY‐VCH Verlag Berlin GmbH |
Online Access: | Get full text |
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Summary: | The effect of thermal processing, that gave limited oxidation from annealing under N2 atmosphere, on multilayer porous silicon (P‐Si) microcavities has been investigated. The reflectivity spectra were measured before and after thermal processing. The observation of multilayer samples by scanning electron microscopy has shown unexpected expansion and compression of P‐Si layers. It is found that thermal processing not only changed the effective refractive indices of the individual porous layers but also roughened their respective interfaces. |
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Bibliography: | ark:/67375/WNG-XXNHLJZJ-W ArticleID:PSSA319 istex:55B98C0755B09E33985C280B2C90AC63B33A323B |
ISSN: | 0031-8965 1521-396X |
DOI: | 10.1002/1521-396X(200011)182:1<319::AID-PSSA319>3.0.CO;2-O |