Temperature dependent IBIC study of 4H–SiC Schottky diodes

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 231; no. 1-4; pp. 491 - 496
• Main Authors: Vittone, E., Rigato, V., Olivero, P., Nava, F., Manfredotti, C., LoGiudice, A., Garino, Y., Fizzotti, F.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-04-2005
• Subjects: 4H–SiC Schottky diodes; Ramo’s theorem; Temperature dependent ion beam induced charge collection; Temperature dependent ion beam induced charge collection; Ramo’s theorem; 4H–SiC Schottky diodes; 72.20.Jv; 29.40.Wk; 81.05.Ea
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/j.nimb.2005.01.105

Ion beam induced charge collection measurements have been performed on an epitaxial 4H–SiC Schottky diode with a focussed 1.5MeV H beam in the temperature range of 120–380K. The experimental procedure consisted in measuring the charge collection efficiency (CCE) at different bias voltages (V) for each fixed temperature. The CCE versus V curves were analyzed in terms of the Schockley–Ramo–Gunn theory and the minority carrier (hole) diffusion length was obtained as a function of temperature.