The capacitive properties of structures based on mesoporous silicon irradiated by low-dose γ rays

• Published in: Technical physics letters Vol. 43; no. 11; pp. 987 - 989
• Main Authors: Galushka, V. V., Zharkova, E. A., Terin, D. V., Sidorov, V. I., Khasina, E. I.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-11-2017; Springer Nature B.V
• Subjects: CAPACITANCE; Capacitance-voltage characteristics; Classical and Continuum Physics; CONCENTRATION RATIO; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DISTRIBUTION; GAMMA RADIATION; IRRADIATION; LAYERS; PHYSICAL RADIATION EFFECTS; Physics; Physics and Astronomy; POROUS MATERIALS; Reactance; RELAXATION TIME; SILICON; Varactor diodes; VARIABLE CAPACITANCE DIODES
• ISSN: 1063-7850; 1090-6533
• DOI: 10.1134/S1063785017110049

The influence of low doses of γ rays on the capacitive properties of structures based on mesoporous silicon has been investigated. The concentration distribution of dangling charged bonds over the layer depth, which changes under irradiation, has been found using the capacitance–voltage characteristics at different frequencies of the test signal. It is shown that the concentration and relaxation time of surface charged states in a structure with a mesoporous silicon layer decrease under γ irradiation, which makes the material promising for devices with controlled reactance (varactors) that are resistant to γ irradiation.