Study of interaction of C+ ion beam with a Si pitch grating on a macro-scale level

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 293; pp. 11 - 15
• Main Authors: Mutzke, Andreas, Bizyukov, Ivan, Langhuth, Hagen, Mayer, Matej, Krieger, Karl, Schneider, Ralf
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15-12-2012
• Subjects: Ion-surface interactions; Reflection; Roughness; SDTrimSP-2D; Sputtering; SDTrimSP-2D; Reflection; Ion-surface interactions; Sputtering; Roughness
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/j.nimb.2012.09.017

A Si pitch grating has been exposed to a 6keV C+ ion beam at normal angle of incidence and at an angle of 42° parallel to the structure. Sputtering of the grating has been observed experimentally by Rutherford backscattering, the areal density of implanted C ions into the Si structure has been measured by nuclear reaction analysis. The bombardment has been simulated by the SDTrimSP-2D code at normal angle of incidence, as well as at angles of 42° parallel and perpendicular to the structure. The numerical simulations show reasonable agreement with experimental results. Significant differences in Si sputtering and implantation of C ions parallel and perpendicular to the structure indicate an anisotropy effect, which could not be observed in the 1D case.