On the geometrical design of integrated Micromegas detectors

• Published in: Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 576; no. 1; pp. 1 - 4
• Main Authors: Blanco Carballo, V.M., Salm, C., Smits, S.M., Schmitz, J., Chefdeville, M., van der Graaf, H., Timmermans, J., Visschers, J.L.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 11-06-2007
• Subjects: Energy resolution; Gain; Integrated Micromegas; Wafer post-procesing; Integrated Micromegas; 29.40.−n; 29.40.Cs; Wafer post-procesing; Energy resolution; Gain
• ISSN: 0168-9002; 1872-9576
• DOI: 10.1016/j.nima.2007.01.108

This paper presents the operational characteristics of several integrated Micromegas detectors. These detectors called InGrids are made by means of micro-electronic fabrication techniques. These techniques allow a large variety of detector geometry to be made and studied. Gain, gain homogeneity and energy resolution were measured for various amplification gap sizes, hole pitches and hole diameters in Argon/Isobutane. Gain measurements as a function of gap thickness are compared to the Rose and Korff formula and a model of the detector gain. Our model uses electric field maps and MAGBOLTZ calculated amplification coefficients.