High-precision 4D tracking with large pixels using thin resistive silicon detectors

• Published in: Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 1057; p. 168671
• Main Authors: Arcidiacono, R., Borghi, G., Boscardin, M., Cartiglia, N., Centis Vignali, M., Costa, M., Dalla Betta, G-F., Ferrero, M., Ficorella, F., Gioachin, G., Lanteri, L., Mandurrino, M., Menzio, L., Mulargia, R., Pancheri, L., Paternoster, G., Rojas, A., Sadrozinski, H-F.W., Seiden, A., Siviero, F., Sola, V., Tornago, M.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-12-2023
• Subjects: 4D-tracking; LGAD; Resistive read-out; Silicon sensors; 4D-tracking; Resistive read-out; LGAD; Silicon sensors
• ISSN: 0168-9002; 1872-9576
• DOI: 10.1016/j.nima.2023.168671

The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the signals seen on the electrodes surrounding the impact point, achieve excellent space and time resolutions even with very large pixels. In this paper, a TCT system using a 1064 nm picosecond laser is used to characterize RSD sensors produced by Fondazione Bruno Kessler. The paper first introduces the parametrization of the errors in the determination of the position and time coordinates in RSD, then outlines the reconstruction method, and finally presents the results. Three different pixel pitches are used in the analysis: 200 × 340, 450 × 450, and 1300 × 1300 μm2. At gain = 30, the 450 × 450 μm2 pixel achieves a time jitter of 20 ps and a spatial resolution of 15 μm concurrently, while the 1300 × 1300 μm2 pixel achieves 30 ps and 30 μm, respectively. The implementation of cross-shaped electrodes improves considerably the response uniformity over the pixel surface.