The Influence of Cavity Design on the Linewidth of Near-IR Single-Mode Vertical-Cavity Surface-Emitting Lasers

• Published in: Technical physics letters Vol. 44; no. 1; pp. 28 - 31
• Main Authors: Blokhin, S. A., Bobrov, M. A., Kuz’menkov, A. G., Blokhin, A. A., Vasil’ev, A. P., Guseva, Yu. A., Kulagina, M. M., Zadiranov, Yu. M., Maleev, N. A., Novikov, I. I., Karachinsky, L. Ya, Ledentsov, N. N., Ustinov, V. M.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-01-2018; Springer Nature B.V
• Subjects: Active regions (lasers); ALUMINIUM ARSENIDES; Aluminum gallium arsenides; Bragg reflectors; Carrier injection; Classical and Continuum Physics; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Emission analysis; GALLIUM ARSENIDES; INDIUM ARSENIDES; INJECTION; LASERS; Lattices; MHZ RANGE 01-100; MIRRORS; NEAR INFRARED RADIATION; Near-IR Vertical-Cavity Surface-Emitting Lasers (Special Issue); Physics; Physics and Astronomy; QUANTUM WELLS; SURFACES; Vertical cavity surface emission lasers
• ISSN: 1063-7850; 1090-6533
• DOI: 10.1134/S1063785018010042

The studies of the emission linewidth for single-mode near-IR vertical-cavity surface-emitting lasers with an active region based on InGaAs/AlGaAs quantum wells and different optical microcavity design. For low mirror loss, lasers with a 1λ cavity and carrier injection through distributed Bragg reflectors demonstrate a linewidth of 70 MHz and its growth to 110 MHz with increasing mirror loss (corresponding differential of efficiency ∼0.65 W/A). The design of the optical cavity with carrier injection through intracavity contacts and low-Q composition Bragg lattices reduces the linewidth to 40 MHz in spite of high mirror loss (corresponding differential efficiency of ∼0.6 W/A).