Semiconductor laser using multimode interference principle

• Published in: Optics and laser technology Vol. 98; pp. 75 - 78
• Main Authors: Gong, Zisu, Yin, Rui, Ji, Wei, Wu, Chonghao
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier Ltd 01-01-2018; Elsevier BV
• Subjects: Communications systems; Gallium indium arsenide phosphide; InGaAsP/InP; Injection current; Interference; Laser beams; Lasers; Multimode interference (MMI); Optical communication; Semiconductor laser; Semiconductor lasers; Semiconductors; Studies; Multimode interference (MMI); InGaAsP/InP; Semiconductor laser
• ISSN: 0030-3992; 1879-2545
• DOI: 10.1016/j.optlastec.2017.06.029

•MMI is introduced in semiconductor laser to realize higher power.•The MMI-LD is fabricated and realized in InGaAsP/InP based material.•The Pout of MMI-LD is 2.296mW while the conventional LD is 0.534mW.•The MMI-LD also shows better temperature tolerance.
Multimode interference (MMI) structure is introduced in semiconductor laser used in optical communication system to realize higher power and better temperature tolerance. Using beam propagation method (BPM), Multimode interference laser diode (MMI-LD) is designed and fabricated in InGaAsP/InP based material. Asa comparison, conventional semiconductor laser using straight single-mode waveguide is also fabricated in the same wafer. With a low injectioncurrent (about 230mA), the output power of the implemented MMI-LD is up to 2.296mW which is about four times higher than the output power of the conventional semiconductor laser. The implemented MMI-LD exhibits stable output operating at the wavelength of 1.52µm and better temperature tolerance when the temperature varies from 283.15K to 293.15K.