Heavily irradiated double-sided wedge silicon microstrip detector
One double-sided trapezoidal microstrip n-type detector was irradiated with 1MeV neutrons up to a dose of 7.9×1013n/cm2 at PSAIF (CERN) and was characterized with laboratory measurements. Biasing resistance and interstrip impedance measurements show that the silicon bulk is inverted to p-type, as ex...
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| Published in: | Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 409; no. 1-3; pp. 132 - 134 |
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| Main Authors: | , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
Elsevier B.V
21-05-1998
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| Online Access: | Get full text |
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| Summary: | One double-sided trapezoidal microstrip n-type detector was irradiated with 1MeV neutrons up to a dose of 7.9×1013n/cm2 at PSAIF (CERN) and was characterized with laboratory measurements. Biasing resistance and interstrip impedance measurements show that the silicon bulk is inverted to p-type, as expected. After irradiation, the full depletion voltage is about 90V, at which value the total leakage current is 56μA/cm2. The full depletion voltage value obtained from the I–V characteristics agrees with the value calculated with a bulk damage model (M. Bruzzi et al., Nucl. Instr. and Meth. A 388 (1997) 345; J.A.J. Mathews et al., Atlas internal note, INDET-NO-118, 1995). |
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| ISSN: | 0168-9002 1872-9576 |
| DOI: | 10.1016/S0168-9002(97)01251-5 |