Total Ionization Radiation Sensor Performance Improvement by Using Si-rich MONOS Device

Total Ionization Radiation Sensor Performance Improvement by Using Si-rich MONOS Device

The Si-rich metal -oxide-nitride-oxide-silicon (hereafter Si-MONOS) can be candidates for non-volatile total ionization dose (TID) radiation sensors. In the case of Si-MONOS gamma radiation sensors, the gamma radiation induces a significant decrease of threshold voltage VT. The change of VT for Si-M...

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Bibliographic Details
Published in:MATEC web of conferences Vol. 71; p. 5007
Main Authors: Hsieh, Wen-Ching, Daniel Lee, Hao-Tien, Jon, Fuh-Cheng, Wu, Shich-Chuan, Heh, Dawei, Tsai, Tzu-I
Format: Journal Article Conference Proceeding
Language:English
Published: Les Ulis EDP Sciences 01-01-2016
Subjects:
Feasibility studies
Gamma irradiation
Gamma rays
Ionization
Radiation detectors
Radiation dosage
Sensors
Silicon
Threshold voltage
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Summary:The Si-rich metal -oxide-nitride-oxide-silicon (hereafter Si-MONOS) can be candidates for non-volatile total ionization dose (TID) radiation sensors. In the case of Si-MONOS gamma radiation sensors, the gamma radiation induces a significant decrease of threshold voltage VT. The change of VT for Si-MONOS after gamma irradiation has a strong correlation to the TID of gamma ray exposure as well. The Si-MONOS capacitor device in this study has demonstrated the better feasibility for non-volatile TID radiation sensing in the future.
ISSN:2261-236X
2274-7214
2261-236X
DOI:10.1051/matecconf/20167105007