Eyring acceleration model in thick nitride/oxide dielectrics

• Published in: Microelectronics and reliability Vol. 47; no. 4; pp. 748 - 751
• Main Author: Evseev, S.B.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Oxford Elsevier Ltd 01-04-2007; Elsevier
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Interfaces; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Thermal stress; Voltage dependence; Dielectric materials; Electric stress; Multiple layer; Oxides; Failures; Time dependence; Kinetic model; Nitrides; Kinetic equation; Poole Frenkel effect; Activation energy
• ISSN: 0026-2714; 1872-941X
• DOI: 10.1016/j.microrel.2007.01.019

A kinetic model is developed, which can predict failure times in thick nitride/oxide dielectric stacks at elevated temperatures. It is shown that failure time depends on the applied bias stress and temperature and, in the general case, obeys a two-stress Arrhenius-type relationship known as an Eyring acceleration model:
t
f
=
B
∗
V
STRESS
-
M
N
∗
exp
Δ
H
kT
where
t
f is the failure time before charge saturation condition occurs,
k is the Boltzmann constant,
T is the absolute temperature, Δ
H is the activation energy,
M and
N are the voltage and time dependent parameters, respectively,
V
STRESS is the externally applied voltage stress and
B is a proportionality constant. Furthermore it is demonstrated that the obtained kinetic equation is physically related to the nitride conduction, described by Frenkel–Poole equation.