Quantum Oscillations of Magnetoresistance in HgCdTe/HgTe/HgCdTe Heterostructures with Inverted Band Spectrum

• Published in: Physics of the solid state Vol. 64; no. 3; pp. 107 - 117
• Main Authors: Bogoliubskii, A. S., Gudina, S. V., Neverov, V. N., Turutkin, K. V., Podgornykh, S. M., Shelushinina, N. G., Yakunin, M. V., Mikhailov, N. N., Dvoretsky, S. A.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-03-2022; Springer; Springer Nature B.V
• Subjects: Electron mass; Heterostructures; Magnetic fields; Magnetoresistance; Magnetoresistivity; Mercury cadmium tellurides; Mercury tellurides; Phase shift; Physics; Physics and Astronomy; Quantum Hall effect; Quantum wells; Solid State Physics; Shubnikov–de Haas oscillations, quantum Hall effect, effective mass; mercury telluride, semiconductor heterostructures
• ISSN: 1063-7834; 1090-6460
• DOI: 10.1134/S1063783422030027

The effects observed in the Shubnikov–de Haas oscillation regime in the HgCdTe/HgTe/HgCdTe heterostructure with a wide (20.3 nm) HgTe quantum well with an inverted band structure are discussed. In a topologically trivial 2D system, a π-shift of magnetooscillation phase is found. A thorough experimental study and theoretical analysis of the data is presented to understand the physical causes of this anomalous phase shift. The effective electron mass
m
c
/
m
0
= (0.022 ± 0.002) obtained from the region of doubly degenerate magnetoresistance peaks is approximately half the theoretical estimates. In the region of stronger magnetic fields, for non-degenerate magnetoresistance peaks, we have
m
c
/
m
0
= (0.034 ± 0.003), which is in good agreement with both theoretical predictions and experimental results obtained from the analysis of activation conductivity in the quantum Hall effect regime. The reasons for this discrepancy are discussed.