Electroreflectance of GaSe. I. Around 3.4 eV

Electroreflectance of GaSe. I. Around 3.4 eV

Electroreflectance of layer compound [straight epsilon]-GaSe is measured around 3.4 eV at 77 K and around 3.2 eV at 300 K with the Schottky-barrier technique for the modulation field F parallel to the c-axis and with the transverse electroreflectance for F[perpendicular]c, where the light is inciden...

Full description

Saved in:
Bibliographic Details
Published in:Journal of the Physical Society of Japan Vol. 38; no. 1; pp. 162 - 168
Main Authors: Sasaki, Yoshiro, Hamaguchi, Chihiro, Nakai, Junkichi
Format: Journal Article
Language:English
Published: Tokyo The Physical Society of Japan 1975
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Electroreflectance of layer compound [straight epsilon]-GaSe is measured around 3.4 eV at 77 K and around 3.2 eV at 300 K with the Schottky-barrier technique for the modulation field F parallel to the c-axis and with the transverse electroreflectance for F[perpendicular]c, where the light is incident nearly normal to the layers. It is found from the experimental results that the structure is due to an excitonic transition at M0 critical point. The transition energy is estimated the to be 3382 meV at 77 K and 3225 meV at 300 K, and binding energy of the exciton 9 meV.
ISSN:0031-9015
1347-4073
DOI:10.1143/JPSJ.38.162