The Effect of Compressive and Tensile Strains on the Electron Structure of Phosphorene

• Published in: Physics of the solid state Vol. 63; no. 11; pp. 1690 - 1694
• Main Authors: Krivosheeva, A. V., Shaposhnikov, V. L., Štich, I.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-11-2021; Springer; Springer Nature B.V
• Subjects: Carrier mobility; Compressive properties; Crystal lattices; Current carriers; Electronic structure; Electronics industry; Nanoelectronics; Nanotechnology devices; Phosphorene; Physics; Physics and Astronomy; Semiconductor materials; Semiconductors; Solid State Physics; deformation; monolayer; band structure; stresses; band gap; phosphorene
• ISSN: 1063-7834; 1090-6460
• DOI: 10.1134/S1063783421100188

A new promising semiconductor material (phosphorene) is studied using theoretical simulation. The possibilities of changing the magnitude and nature of interband transitions under the action of compressive and tensile stresses on the phosphorene crystal lattice are determined. It is found that phosphorene can be both direct-gap and indirect-gap semiconductors, depending on the magnitude and direction of stress action. Phosphorene can be used in new generation nanoelectronic devices with controlled movement of charge carriers.