Atomically controlled hetero-epitaxy of Fe3Si/SiGe for spintronics application

• Published in: Thin solid films Vol. 517; no. 1; pp. 181 - 183
• Main Authors: MIYAO, Masanobu, UEDA, Koji, ANDO, Yu-Ichiro, KUMANO, Mamoru, SADOH, Taizoh, NARUMI, Kazumasa, MAEDA, Yoshihito
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Amsterdam Elsevier 03-11-2008
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electronics; Exact sciences and technology; Magnetic properties and materials; Magnetic properties of monolayers and thin films; Magnetic properties of surface, thin films and multilayers; Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Theory and models of film growth; Temperature dependence; RBS; Fe3Si; Silicon alloy; Silicides; Ge-Si alloys; Ferromagnetic materials; Epitaxial film; Iron alloy; Thermal stability; Thermal properties; Heterostructure; Transmission electron microscopy; SiGe; Ferromagnetic silicide; Transistor channel; Integrated circuit; Growth mechanism; Molecular beam epitaxy; Germanium; Heteroepitaxy; Heterostructures; Interface; Spintronics
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2008.08.055