Atomic layer deposition of Ge2Sb2Te5 thin films

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Bibliographic Details
Published in:	Microelectronic engineering Vol. 86; no. 7-9; pp. 1946 - 1949
Main Authors:	RITALA, Mikko, PORE, Viljami, HATANPÄÄ, Timo, HEIKKILA, Mikko, LESKELÄ, Markku, MIZOHATA, Kenichiro, SCHROTT, Alejandro, RAOUX, Simone, ROSSNAGEL, Stephen M
Format:	Conference Proceeding Journal Article
Language:	English
Published:	Amsterdam Elsevier 01-07-2009
Subjects:	Applied sciences Electronics Exact sciences and technology Interfaces Materials Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Atomic layer method Energy dispersion Atomic layer deposition Time of flight method Phase change Germanium antimony telluride High temperature X ray diffraction Thin film
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Description
ISSN:	0167-9317 1873-5568
DOI:	10.1016/j.mee.2009.03.014