ZrO2 thin films on Si substrate

In the advancement of metal–oxide–semiconductor technology, Si-based semiconductor, with SiO 2 as outstanding dielectric, has been dominating microelectronic industry for decades. However, the drastic down-scaling in ultra-large-scale integrated circuitry has made ultrathin SiO 2 (~1.2 nm) unaccepta...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics Vol. 21; no. 10; pp. 980 - 993
Main Authors: Wong, Yew Hoong, Cheong, Kuan Yew
Format: Journal Article
Language:English
Published: Boston Springer US 01-10-2010
Springer
Springer Nature B.V
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Summary:In the advancement of metal–oxide–semiconductor technology, Si-based semiconductor, with SiO 2 as outstanding dielectric, has been dominating microelectronic industry for decades. However, the drastic down-scaling in ultra-large-scale integrated circuitry has made ultrathin SiO 2 (~1.2 nm) unacceptable for many practical reasons. Introduction of ZrO 2 as high- κ dielectrics replacing SiO 2 is undeniably a potential yet formidable solution for the aforementioned problem. The objective of this review is to present the current knowledge of ZrO 2 thin film as gate dielectric on Si, in terms of its material and electrical properties produced by various deposition techniques. One of the techniques being focused is thermal oxidation of sputtered Zr and the mechanisms of transforming the metal into oxide has been extensively reviewed.
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ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-010-0144-5