Mechanisms of forming the Cr–N composite in the unsteady-state stage of ion beam-assisted deposition process

• Published in: Vacuum Vol. 70; no. 2-3; pp. 331 - 337
• Main Authors: Bendikov, V.I., Guglya, A.G., Marchenko, I.G., Malykhin, D.G., Neklyudov, I.M.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Oxford Elsevier Ltd 10-03-2003; Elsevier
• Subjects: Applied sciences; Chromium; Computer simulation; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electrical properties of specific thin films; Electrical resistivity; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Ion and electron beam-assisted deposition; ion plating; Ion-assisted deposition; Materials science; Metal and metallic alloys; Metals and metallic alloys; Metals. Metallurgy; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Theory and models of film growth; Thin films; Thin films; Chromium; Ion-assisted deposition; Computer simulation; Electrical resistivity; Crystal defects; Ion implantation; Electrical conductivity; Impurity density; Metal matrix composite; Theoretical study; Computerized simulation; Crystal growth from vapors; XRD; Ion beam assisted deposition method; Experimental study; Composite materials; Transition elements; Growth mechanism; Nitrogen additions; Chemical composition
• ISSN: 0042-207X; 1879-2715
• DOI: 10.1016/S0042-207X(02)00666-8

The paper presents the experimental and theoretical study of Cr–N films deposition by the IBAD method. The investigations were performed at various deposition rates. The ion energy was 30keV.
Computer simulation methods were used to calculate the parameters of film irradiation with nitrogen ions for obtaining homogeneous chemical composition.
The electrophysical properties of films produced were investigated experimentally. It is found that in the initial stages of film deposition the electrical resistivity of films irradiated with nitrogen ions is about 200 times higher than the one in unirradiated films. As the film thickness increases, this difference falls down to a factor of 6.
The X-ray diffraction and electron microscopy analysis have revealed that in the films under irradiation Cr2O3 and Cr2N precipitates are formed. The present results are discussed in the framework of the concepts about the influence of radiation defects on the structure of resulting films.