Hybrid Integration of III–V Solar Microcells for High-Efficiency Concentrated Photovoltaic Modules

• Published in: IEEE journal of selected topics in quantum electronics Vol. 24; no. 2; pp. 1 - 9
• Main Authors: Tauke-Pedretti, Anna, Cederberg, Jeffrey G., Cruz-Campa, Jose L., Alford, Charles, Sanchez, Carlos A., Nielson, Gregory N., Okandan, Murat, Sweatt, William, Jared, Bradley H., Saavedra, Michael, Miller, William, Keeler, Gordon A., Paap, Scott, Mudrick, John, Lentine, Anthony, Resnick, Paul, Gupta, Vipin, Nelson, Jeffrey, Li, Lan, Li, Duanhui, Gu, Tian, Hu, Juejun
• Format: Journal Article
• Language: English
• Published: United States IEEE 01-03-2018; IEEE Lasers and Electro-optics Society
• Subjects: Epitaxial growth; Gallium arsenide; hybrid integration; III–V solar cells; Junctions; Microcell networks; Multijunction solar cells; Photovoltaic cells; Resistance; Silicon; SOLAR ENERGY; wafer bonding
• ISSN: 1077-260X; 1558-4542
• DOI: 10.1109/JSTQE.2018.2812218

The design, fabrication, and performance of InGaAs and InGaP/GaAs microcells are presented. These cells are integrated with a Si wafer providing a path for insertion in hybrid concentrated photovoltaic modules. Comparisons are made between bonded cells and cells fabricated on their native wafer. The bonded cells showed no evidence of degradation in spite of the integration process that involved significant processing including the removal of the III-V substrate.