Quasibound state determination of arbitrary-geometry quantum heterostructures

• Published in: Microelectronics Vol. 30; no. 10; pp. 935 - 951
• Main Authors: Anemogiannis, E., Glytsis, E.N., Gaylord, T.K.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01-10-1999
• Subjects: Quantum devices; Quantum heterostructures; Quasibound states; Resonant phenomena; Resonant phenomena; Quantum heterostructures; Quasibound states; Quantum devices
• ISSN: 1879-2391; 0026-2692; 1879-2391
• DOI: 10.1016/S0026-2692(99)00060-9

The operation and performance of semiconductor electronic and optoelectronic quantum-heterostructures devices are critically dependent on the quasibound states of these structures. In this paper a unified set of four numerical methods is presented that are capable of determining the quasibound-state eigen-energies and their lifetimes in quantum heterostructures having arbitrary potential profiles. The methods are applicable to symmetric, asymmetric, unbiased or biased devices. All the numerical approaches solve the single-band effective-mass Schrödinger equation. The numerical methods are shown to be both numerically efficient and accurate.