Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance-Part II: Model Validation
In this paper, we show a validation of our compact model for negative capacitance FET (NCFET) presented in Part I. The model is thoroughly validated with the TCAD simulations with respect to ferroelectric thickness scaling and temperature effects. Interestingly, we find that an NCFET with PZT ferroe...
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| Published in: | IEEE transactions on electron devices Vol. 63; no. 12; pp. 4986 - 4992 |
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| Main Authors: | , , , , , , |
| Format: | Journal Article |
| Language: | English |
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New York
IEEE
01-12-2016
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
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| Abstract | In this paper, we show a validation of our compact model for negative capacitance FET (NCFET) presented in Part I. The model is thoroughly validated with the TCAD simulations with respect to ferroelectric thickness scaling and temperature effects. Interestingly, we find that an NCFET with PZT ferroelectric of a large thickness provides a negative output differential resistance in addition to an expected high ON current and a sub-60 mV/decade subthreshold swing. The model is also tested for the Gummel symmetry and its transient capabilities are highlighted through a ring oscillator circuit simulation. |
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| AbstractList | In this paper, we show a validation of our compact model for negative capacitance FET (NCFET) presented in Part I. The model is thoroughly validated with the TCAD simulations with respect to ferroelectric thickness scaling and temperature effects. Interestingly, we find that an NCFET with PZT ferroelectric of a large thickness provides a negative output differential resistance in addition to an expected high ON current and a sub-60 mV/decade subthreshold swing. The model is also tested for the Gummel symmetry and its transient capabilities are highlighted through a ring oscillator circuit simulation. |
| Author | Agarwal, Amit Khandelwal, Sourabh Salahuddin, Sayeef Chauhan, Yogesh Singh Dutta, Tapas Pahwa, Girish Hu, Chenming |
| Author_xml | – sequence: 1 givenname: Girish surname: Pahwa fullname: Pahwa, Girish email: girish@iitk.ac.in organization: Dept. of Electr. Eng., IIT Kanpur, Kanpur, India – sequence: 2 givenname: Tapas surname: Dutta fullname: Dutta, Tapas organization: Dept. of Electr. Eng., IIT Kanpur, Kanpur, India – sequence: 3 givenname: Amit surname: Agarwal fullname: Agarwal, Amit organization: Dept. of Phys., IIT Kanpur, Kanpur, India – sequence: 4 givenname: Sourabh surname: Khandelwal fullname: Khandelwal, Sourabh organization: Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA – sequence: 5 givenname: Sayeef surname: Salahuddin fullname: Salahuddin, Sayeef organization: Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA – sequence: 6 givenname: Chenming surname: Hu fullname: Hu, Chenming organization: Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA – sequence: 7 givenname: Yogesh Singh surname: Chauhan fullname: Chauhan, Yogesh Singh email: chauhan@iitk.ac.in organization: Dept. of Electr. Eng., IIT Kanpur, Kanpur, India |
| BookMark | eNo9kUtLJDEUhcOgMO1jL8wm4LrapPLoZHZSvhocexhat0Wq6lYbKZM2SSn-Fv-sqWlxdbnc850L5xygPecdIHRCyZxSos_WlxfzklA5LyXlnMkfaEaFWBRacrmHZoRQVWim2E90EONTXiXn5Qx9nDszvEcbsXEdrvzz1rQJ__EdDNZtsO_xHWxMsq-AK5NvNhnXAl4H4zKUfMBvNj3iG7t5xKu7ohpDAJf-m32DqzFtx4QvbN_DdLVmwP9gwiev4q8JCS-Xv3df8YMZbJdB747Qfm-GCMdf8xDdX12uq5vidnW9rM5vi5YxlYpmwXrJFRdUtZx1SvfAS70oqc4xQANUAddC920pWdO1omkEV4J1RJUNbShlh-h057sN_mWEmOonP4acS6yp4pySUgqWVWSnaoOPMUBfb4N9NuG9pqSeKqhzBfVUQf1VQUZ-7RALAN_yhdCEEM0-AZFIhMA |
| CODEN | IETDAI |
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| Cites_doi | 10.1109/VLSIT.2016.7573446 10.1063/1.1644917 10.1109/JXCDC.2015.2448414 10.1109/TED.2011.2160868 10.1063/1.4704179 10.1063/1.4943786 10.1109/TED.2006.881005 10.1109/TED.2016.2614436 10.1109/TED.2016.2519761 10.1016/j.sse.2015.07.001 10.1038/nmat4148 |
| ContentType | Journal Article |
| Copyright | Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016 |
| Copyright_xml | – notice: Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016 |
| DBID | 97E RIA RIE AAYXX CITATION 7SP 8FD L7M |
| DOI | 10.1109/TED.2016.2614436 |
| DatabaseName | IEEE All-Society Periodicals Package (ASPP) 2005-present IEEE All-Society Periodicals Package (ASPP) 1998–Present IEEE Electronic Library Online CrossRef Electronics & Communications Abstracts Technology Research Database Advanced Technologies Database with Aerospace |
| DatabaseTitle | CrossRef Technology Research Database Advanced Technologies Database with Aerospace Electronics & Communications Abstracts |
| DatabaseTitleList | Technology Research Database |
| Database_xml | – sequence: 1 dbid: RIE name: IEEE Electronic Library Online url: http://ieeexplore.ieee.org/Xplore/DynWel.jsp sourceTypes: Publisher |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering |
| EISSN | 1557-9646 |
| EndPage | 4992 |
| ExternalDocumentID | 10_1109_TED_2016_2614436 7590009 |
| Genre | orig-research |
| GrantInformation_xml | – fundername: Semiconductor Research Corporation funderid: 10.13039/100000028 – fundername: Council of Scientific and Industrial Research, Department of Science and Technology, Science and Engineering Research Board, Government of India |
| GroupedDBID | -~X .DC 0R~ 29I 3EH 4.4 5GY 5VS 6IK 97E AAJGR AASAJ ABQJQ ABVLG ACGFO ACGFS ACIWK ACKIV ACNCT AENEX AETIX AI. AIBXA AKJIK ALLEH ALMA_UNASSIGNED_HOLDINGS ASUFR ATWAV B-7 BEFXN BFFAM BGNUA BKEBE BPEOZ CS3 DU5 EBS EJD F5P HZ~ H~9 IAAWW IBMZZ ICLAB IDIHD IFIPE IFJZH IPLJI JAVBF LAI M43 MS~ O9- OCL P2P RIA RIE RIG RNS TAE TN5 VH1 VJK VOH XFK AAYXX CITATION 7SP 8FD L7M |
| ID | FETCH-LOGICAL-c338t-b73f6484518c43d89fe4297219436ebe18e4959fc263bdc5bb54853d082b1b113 |
| IEDL.DBID | RIE |
| ISSN | 0018-9383 |
| IngestDate | Thu Oct 10 20:26:57 EDT 2024 Fri Aug 23 02:32:39 EDT 2024 Wed Jun 26 19:22:13 EDT 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 12 |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-c338t-b73f6484518c43d89fe4297219436ebe18e4959fc263bdc5bb54853d082b1b113 |
| ORCID | 0000-0003-2094-858X |
| PQID | 1844102653 |
| PQPubID | 85466 |
| PageCount | 7 |
| ParticipantIDs | ieee_primary_7590009 proquest_journals_1844102653 crossref_primary_10_1109_TED_2016_2614436 |
| PublicationCentury | 2000 |
| PublicationDate | 2016-Dec. 2016-12-00 20161201 |
| PublicationDateYYYYMMDD | 2016-12-01 |
| PublicationDate_xml | – month: 12 year: 2016 text: 2016-Dec. |
| PublicationDecade | 2010 |
| PublicationPlace | New York |
| PublicationPlace_xml | – name: New York |
| PublicationTitle | IEEE transactions on electron devices |
| PublicationTitleAbbrev | TED |
| PublicationYear | 2016 |
| Publisher | IEEE The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher_xml | – name: IEEE – name: The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| References | ref13 ref12 ref10 li (ref2) 2015 ref1 ref8 ref7 ref9 ref4 ref3 ref6 ref5 rabe (ref11) 2007; 105 |
| References_xml | – ident: ref9 doi: 10.1109/VLSIT.2016.7573446 – start-page: 22.6.1 year: 2015 ident: ref2 article-title: Sub-60mV-swing negative-capacitance FinFET without hysteresis publication-title: Proc IEEE Int Electron Devices Meeting (IEDM) contributor: fullname: li – ident: ref10 doi: 10.1063/1.1644917 – ident: ref3 doi: 10.1109/JXCDC.2015.2448414 – ident: ref13 doi: 10.1109/TED.2011.2160868 – ident: ref12 doi: 10.1063/1.4704179 – ident: ref5 doi: 10.1063/1.4943786 – ident: ref7 doi: 10.1109/TED.2006.881005 – ident: ref1 doi: 10.1109/TED.2016.2614436 – volume: 105 year: 2007 ident: ref11 publication-title: Physics of Ferroelectrics A Modern Perspective contributor: fullname: rabe – ident: ref8 doi: 10.1109/TED.2016.2519761 – ident: ref6 doi: 10.1016/j.sse.2015.07.001 – ident: ref4 doi: 10.1038/nmat4148 |
| SSID | ssj0016442 |
| Score | 2.591284 |
| Snippet | In this paper, we show a validation of our compact model for negative capacitance FET (NCFET) presented in Part I. The model is thoroughly validated with the... |
| SourceID | proquest crossref ieee |
| SourceType | Aggregation Database Publisher |
| StartPage | 4986 |
| SubjectTerms | Capacitance Circuits Compact modeling ferroelectric Ferroelectric materials Ferroelectricity Field effect transistors MOSFET negative capacitance negative capacitance FET (NCFET) negative differential resistance (NDR) Semiconductor device modeling Temperature effects Thickness Transient analysis transients |
| Title | Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance-Part II: Model Validation |
| URI | https://ieeexplore.ieee.org/document/7590009 https://www.proquest.com/docview/1844102653 |
| Volume | 63 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV07T8MwELZoJxh4FUShIA8sSKRtYie22VBL1S4F8RJblMQ2QkJtRZNfw5_lznmABAtbh9iJ-tl39_nO3xFyzqOEGSW0l1gugKAI4ymmpWcDm1hMn9gUzyGnD2L-Isc3KJNz2dyFMca44jPTx58ul6-XWYFHZQPhWlyqFmkJJcu7Wk3GAPx6qQzuwwYG2lWnJIdqACYAa7iifoDsx4kxf7sg11PllyF23mWy87_v2iXbVRRJr0vY98iGWeyTrR_agh3yWcuN0GShqdv2WU6x9RleQKdLS-fm1al-0xE4zOwtR_yp811OOoTiES3FOhAK5rbScXKTNQNvi3xV5HRcNVkBY_FO7w0Ox7m8O1iWdDa7Kt9KnyHkLzs4HZCnyc3jaOpVnRi8DChs7qWC2YhLHvoy4wClsgb8GJBHBX8nLANfGiBaymZBxFKdhWkKRChkGuKL1E99nx2S9mK5MEeEMh4YCAqV9rXiqWFJYoWNbBgME2mlz7rkogYnXpWCG7EjKkMVA5AxAhlXQHZJB8Fonqtw6JJejWZc7ch1DEyWQzAVhez471EnZBPnLktVeqSdfxTmlLTWujhzK-0LTS3R_A |
| link.rule.ids | 315,782,786,798,27935,27936,54770 |
| linkProvider | IEEE |
| linkToHtml | http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV07T8MwED5BGYCBV0GUpwcWJAJN7MQxG-KhVkBBUBBblMQ2QkJtRZNfw5_lzkkLEixsGWI7ymff3eezvwM4EFHKjZLaS62QSFCk8RTXsWcDm1pKn9iM9iE7j7L3El9ckkzO0fQujDHGHT4zx_Tocvl6mJe0VXYiXYlLNQtzoZCyXd3WmuYM0LNX2uA-LmEkXpOkZFudoBGgU1zRcUD8x8kxfzshV1Xllyl2_uVq-X9ftgJLdRzJzirgV2HGDNZg8Ye6YBM-J4IjLB1o5hZ-XjAqfkZX0NnQsp55dbrf7BxdZv5W0Axgzns58RBGm7SMToIwNLi1kpPrbNrwrixGZcEu6jIraC7e2YOh5tSXd48Tk3W7p9Wo7BmD_qqG0zo8XV32zzteXYvBy5HEFl4muY1ELEI_zgWCqaxBT4b0UeHvxIngxwaplrJ5EPFM52GWIRUKucYII_Mz3-cb0BgMB2YTGBeBwbBQaV8rkRmeplbayIZBO41t7PMWHE7ASUaV5EbiqEpbJQhkQkAmNZAtaBIY0_dqHFqwM0EzqdfkOEEuKzCcikK-9XerfZjv9G9vkptu73obFmic6uDKDjSKj9LswuxYl3tu1n0BcXnVRw |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Analysis+and+Compact+Modeling+of+Negative+Capacitance+Transistor+with+High+ON-Current+and+Negative+Output+Differential+Resistance-Part+II%3A+Model+Validation&rft.jtitle=IEEE+transactions+on+electron+devices&rft.au=Pahwa%2C+Girish&rft.au=Dutta%2C+Tapas&rft.au=Agarwal%2C+Amit&rft.au=Khandelwal%2C+Sourabh&rft.date=2016-12-01&rft.pub=IEEE&rft.issn=0018-9383&rft.eissn=1557-9646&rft.volume=63&rft.issue=12&rft.spage=4986&rft.epage=4992&rft_id=info:doi/10.1109%2FTED.2016.2614436&rft.externalDocID=7590009 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0018-9383&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0018-9383&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0018-9383&client=summon |