Influence of temperature on the epitaxial growth of In2O3 thin films on Y-ZrO2(111)

• Published in: Journal of crystal growth Vol. 318; no. 1; pp. 345 - 350
• Main Authors: Zhang, K.H.L., Lazarov, V.K., Lai, H.H.-C., Egdell, R.G.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01-03-2011; Elsevier
• Subjects: A1. Atomic force microscopy; A1. Growth modes; A1. Stresses; A1. X-ray diffraction; A3. Molecular beam epitaxy; B1. Oxides; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Defects and impurities in crystals; microstructure; Exact sciences and technology; Grain and twin boundaries; Materials science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Physics; Structure of solids and liquids; crystallography; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; A1. Atomic force microscopy; B1. Oxides; A3. Molecular beam epitaxy; A1. X-ray diffraction; A1. Growth modes; A1. Stresses; Grain boundaries; Atomic force microscopy; High density; Plasma assisted processing; XRD; Thin films; Zirconium oxide; Temperature effects; Molecular beam epitaxy; Stress effects; Carrier mobility; Temperature dependence; Electron scattering; Crystal defects; Annealing; Epitaxial layers; Stabilized zirconia; Indium oxide; Morphology; Growth mechanism
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2010.10.143

The influence of the substrate temperature on the epitaxial growth of In2O3 on Y-stabilized ZrO2(111) by oxygen plasma assisted molecular beam epitaxy has been investigated over a range between 550 and 860°C. In all cases the films grow with (111) planes of the epilayer parallel to those of the substrate. Films grown at low temperature (T<650°C) are characterised by a granular but continuous morphology. The high density of grain boundaries in these films may act as electron scattering centres, thus giving rise to low carrier mobility. For substrate temperatures above 700°C, the films broke up into loosely connected mesa with serrated edges. The mesa had typical lateral dimensions of order 2–5μm and exhibited atomically flat surface. X-ray diffraction shows that the change in film morphology releases strain. The effects of high temperature annealing on the properties of films deposited at low temperatures was also studied.