Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices

• Published in: Materials letters Vol. 51; no. 6; pp. 500 - 503
• Main Authors: Reed, M.L, Ritums, M.K, Stadelmaier, H.H, Reed, M.J, Parker, C.A, Bedair, S.M, El-Masry, N.A
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01-12-2001; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Ga–Mn–N; Magnetic; Magnetic properties and materials; Nonmetallic ferromagnetic materials; Physics; Semiconductors; Studies of specific magnetic materials; Semiconductors; Ga–Mn–N; Magnetic; Crystal growth; Spin electronics; Curie point; Magnetization; Gallium nitrides; Ternary compounds; Dilute alloys; Magnetic hysteresis; Hall effect; Fabrication property relation; MOCVD; Magnetic semiconductors; Manganese nitrides; Ferromagnetism; Depth profiles
• ISSN: 0167-577X; 1873-4979
• DOI: 10.1016/S0167-577X(01)00342-1

A new dilute magnetic semiconductor (Ga,Mn)N grown by metal organic chemical vapor deposition (MOCVD) is reported. Vibrating sample magnetometer (VSM) and extraordinary Hall effect (EHE) measurements verified a ferromagnetic component at room temperature. The direction of the easy axis and the Curie temperature varies with the growth conditions, the latter ranging from 38°C to 75°C. Secondary ion mass spectroscopy (SIMS) confirms diffusion of Mn into the GaN to a depth of 380 Å.