GaN films deposited by planar magnetron sputtering

• Published in: Vacuum Vol. 66; no. 3; pp. 233 - 237
• Main Authors: Kikuma, T, Tominaga, K, Furutani, K, Kusaka, Kazuya, Hanabusa, Takao, Mukai, Takashi
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Oxford Elsevier Ltd 19-08-2002; Elsevier
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Physics of gases, plasmas and electric discharges; Physics of plasmas and electric discharges; Plasma applications; Sputtered GaN film; Sputtering; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Sputtered GaN film; Sputtering; Temperature dependence; Inorganic compounds; Films; Crystal orientation; Gallium nitrides; Crystal growth from vapors; XRD; Experimental study; Preferred orientation; Substrates; Nitrides; Magnetrons; Radiofrequency sputtering; III-V semiconductors
• ISSN: 0042-207X; 1879-2715
• DOI: 10.1016/S0042-207X(02)00147-1

The crystal orientation of GaN films deposited on fused quartz substrates by rf planar magnetron sputtering using a mesh to guard against plasma exposure was investigated by X-ray diffraction. Sample films were deposited at constant N
2 gas pressure and input power at a range of substrate temperatures between 84°C and 600°C. It was found that GaN films with good crystal orientation can be produced by rf sputtering with the
c-axis of GaN crystals oriented normal to the substrate surface in almost all films produced. The crystal 0
0·2 orientation was good at substrate temperatures exceeding 300°C, however, films deposited at 600°C peeled from the substrate. The fine mesh installed to protect the film from exposure to plasma was found to be very useful for depositing films with a good crystal orientation of 0
0·2, and the best crystal orientation was realized for a film deposited by sputtering with a target to mesh separation of 30
mm.