Coherence-collapse threshold of 1.3-μm semiconductor DFB lasers

• Published in: IEEE photonics technology letters Vol. 15; no. 1; pp. 9 - 11
• Main Authors: Grillot, F., Thedrez, B., Gauthier-Lafaye, O., Martineau, M.F., Voiriot, V., Lafragette, J.L., Gentner, J.L., Silvestre, L.
• Format: Journal Article
• Language: English
• Published: IEEE 01-01-2003
• Subjects: Chips; Coatings; Coherence; Collapse; Diffraction gratings; Distributed feedback devices; Fiber lasers; Gratings; Laser feedback; Laser modes; Laser theory; Lasers; Optical feedback; Optical reflection; Semiconductor lasers; Semiconductors; Thresholds; Unions
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/LPT.2002.805771

The onset of the coherence-collapse threshold is theoretically and experimentally studied for monomode 1.3-μm antireflection/high reflection distributed-feedback lasers taking into account facet phase effects. The variation of the coherence collapse from chip to chip due to the facet phase is in the range of 7 dB and remains almost independent of the grating coefficient. Lasers that operate without coherence collapse under -15-dB optical feedback, while exhibiting an efficiency as high as 0.30 W/A, are demonstrated. Such lasers are adequate for 2.5 Gb/s isolator-free transmission without under the International Telecommunication Union recommended return loss.