Diamond thick film deposition in wafer scale using single-cathode direct current plasma assisted chemical vapour deposition

Deposition behavior of CVD diamond thick film by direct current (DC) plasma assisted chemical vapour deposition method was investigated on a wafer scale of 4 inches (10 cm) in diameter. A diode configuration with a cathode connected to the DC power supply and a grounded substrate was used, on which...

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Bibliographic Details
Published in:	Thin solid films Vol. 435; no. 1; pp. 89 - 94
Main Authors:	Lee, Wook-Seong, Baik, Young-Joon, Chae, Ki-Woong
Format:	Journal Article Conference Proceeding
Language:	English
Published:	Lausanne Elsevier B.V 01-07-2003 Elsevier Science
Subjects:	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science; rheology DC plasma Diamond wafer Exact sciences and technology Large-area Materials science Methods of deposition of films and coatings; film growth and epitaxy Physics Physics of gases, plasmas and electric discharges Physics of plasmas and electric discharges Plasma applications Uniformity DC plasma Large-area Diamond wafer Uniformity Plasma physics Synthetic mineral Thick films Diamonds Operating mode Crystal growth from vapors Experimental study CVD Thickness Direct current Nonmetals PECVD Plasma stabilization
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